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Phys. Rev. Lett. 83, 5531–5534 (1999)

Onset of Step Antibanding Instability due to Surface Electromigration

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Konrad Thürmer1, Da-Jiang Liu1,*, Ellen D. Williams1,3, and John D. Weeks2,3
1Department of Physics, University of Maryland, College Park, Maryland 20742-4111
2Department of Chemistry, University of Maryland, College Park, Maryland 20742-2021
3Institute for Phyiscal Science and Technology, University of Maryland, College Park, Maryland 20742-2431

Received 16 June 1999; published in the issue dated 27 December 1999

Heating by a direct electric current can produce step bunches on vicinal semiconductor surfaces. Under extreme conditions, steps crossing from one bunch to another bend sufficiently to create bands of steps of the opposite sign (antibands). Unusual large scale scanning tunneling microscopy images reveal a mechanism where field-induced concentration gradients produce a spatially variable step velocity that drives the antiband formation. A continuum step model allows quantitative analysis of crossing step shapes, yielding an effective charge for the diffusing adatoms of qeff = 0.13 electron units at 1270 °C.

© 1999 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.83.5531
DOI:
10.1103/PhysRevLett.83.5531
PACS:
66.30.Qa, 68.35.Bs, 68.35.Rh

*Present address: Ames Laboratory, Iowa State University, Ames, Iowa 50011.