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Phys. Rev. Lett. 84, 3338–3341 (2000)

Molecular Dynamics Simulation of Structural Transformation in Silicon Carbide under Pressure

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Fuyuki Shimojo1,2, Ingvar Ebbsjö3, Rajiv K. Kalia1, Aiichiro Nakano1, Jose P. Rino1,4, and Priya Vashishta1
1Concurrent Computing Laboratory for Materials Simulations, Department of Physics and Astronomy and Department of Computer Science, Louisiana State University, Baton Rouge, Louisiana 70803
2Faculty of Integrated Arts and Sciences, Hiroshima University, Higashi-Hiroshima 739-8521, Japan
3Studsvik Neutron Research Laboratory, University of Uppsala, Nyköping, Sweden
4Department of Physics, Universidade Federal de São Carlos, São Carlos, São Paulo, Brazil

Received 12 November 1999; published in the issue dated 10 April 2000

Pressure-induced structural transformation in cubic silicon carbide is studied with the isothermal-isobaric molecular-dynamics method using a new interatomic potential scheme. The reversible transformation between the fourfold coordinated zinc-blende structure and the sixfold coordinated rocksalt structure is successfully reproduced by the interatomic potentials. The calculated volume change at the transition and hysteresis are in good agreement with experimental data. The atomistic mechanisms of the structural transformation involve a cubic-to-monoclinic unit-cell transformation and a relative shift of Si and C sublattices in the {100} direction.

© 2000 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.84.3338
DOI:
10.1103/PhysRevLett.84.3338
PACS:
61.50.Ks, 64.70.Kb, 62.20.Dc