Phys. Rev. Lett. 84, 4180–4183 (2000)Universal Distribution of Residual Carriers in Tetrahedrally Coordinated Amorphous SemiconductorsReceived 2 July 1999; published in the issue dated 1 May 2000 An uncommon electron spin resonance technique is used to show that a universal distribution of residual carriers exists in tetrahedrally coordinated amorphous semiconductors following optical excitation at low temperatures. This universal behavior at long decay times results because statistical fluctuations in the electron and hole densities cannot occur and therefore do not affect the kinetics. This behavior is confirmed for carrier densities between 1016 and 1017 cm-3 and decay times as long as 104 s. © 2000 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.84.4180
DOI:
10.1103/PhysRevLett.84.4180
PACS:
72.20.Ee, 71.23.Cq, 72.80.Ng, 76.30.-v
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