Phys. Rev. Lett. 84, 4641–4644 (2000)Instability-Driven SiGe Island GrowthReceived 8 November 1999; published in the issue dated 15 May 2000 Three-dimensional islanding is generally assumed to proceed through nucleation and growth. Here we present studies showing the growth of Si1-xGex islands (0.2<x<0.6) without nucleation. Rather, a strain-driven growth instability induces a network of elevated cells, where the angle of elevation self-limits when {105} facets form pyramidal islands. These strain-modulated surfaces may serve as a template for the spatially controlled growth of quantum dot ensembles. © 2000 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.84.4641
DOI:
10.1103/PhysRevLett.84.4641
PACS:
68.35.Bs, 68.55.Jk, 81.10.Bk, 81.15.Kk
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