Phys. Rev. Lett. 84, 4645–4648 (2000)Scanning Tunneling Microscopy Identification of Atomic-Scale Intermixing on Si(100) at Submonolayer Ge CoveragesReceived 24 January 2000; published in the issue dated 15 May 2000 The positions of Ge atoms intermixed in the Si(100) surface at very low concentration are identified using empty-state imaging in scanning tunneling microscopy. A measurable degree of place exchange occurs at temperatures as low as 330 K. Contrary to earlier conclusions, good differentiation between Si atoms and Ge atoms can be achieved by proper imaging conditions. © 2000 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.84.4645
DOI:
10.1103/PhysRevLett.84.4645
PACS:
68.35.Bs, 61.16.Ch, 68.35.Fx, 73.20.At
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