Phys. Rev. Lett. 84, 4649–4652 (2000)Structure of III-Sb(001) Growth Surfaces: The Role of HeterodimersReceived 16 November 1999; published in the issue dated 15 May 2000 We have determined the structure of AlSb and GaSb (001) surfaces prepared by molecular beam epitaxy under typical Sb-rich device growth conditions. Within the range of flux and temperature where the diffraction pattern is nominally (1×3), we find that there are actually three distinct, stable (4×3) surface reconstructions. The three structures differ from any previously proposed for these growth conditions, with two of the reconstructions incorporating mixed III-V dimers within the Sb surface layer. These heterodimers appear to play an important role in island nucleation and growth. © 2000 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.84.4649
DOI:
10.1103/PhysRevLett.84.4649
PACS:
68.35.Bs, 61.16.Ch, 73.61.Ey, 81.15.Hi
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