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Phys. Rev. Lett. 84, 4954–4957 (2000)

Interband Scattering and the “Metallic Phase” of Two-Dimensional Holes in GaAs /AlGaAs

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Yuval Yaish1, Oleg Prus1, Evgeny Buchstab1, Shye Shapira2, Gidi Ben Yoseph1, Uri Sivan1, and Ady Stern3
1Department of Physics and Solid State Institute, Technion-IIT, Haifa 32000, Israel
2Cavendish Laboratory, Madingley Road, Cambridge CB3 OHE, United Kingdom
3Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 76100, Israel

Received 4 May 1999; published in the issue dated 22 May 2000

The “metallic” characteristics of high density holes in GaAs/AlGaAs heterostructures are attributed to inelastic scattering between the two split heavy hole bands. Landau fan diagrams and weak field magnetoresistance are employed to measure the interband scattering rate. The inelastic rate is found to depend on temperature with an activation energy similar to that characterizing the longitudinal resistance. It is argued that acoustic plasmon mediated Coulomb scattering might be responsible for the Arrhenius dependence on temperature. The absence of standard Coulomb scattering characterized by a power-law dependence upon temperature is pointed out.

© 2000 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.84.4954
DOI:
10.1103/PhysRevLett.84.4954
PACS:
73.40.-c, 71.30.+h, 72.20.Dp