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APS » Journals » Phys. Rev. Lett. » Volume 84 » Issue 22
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Phys. Rev. Lett. 84, 5220–5223 (2000)

Stimulated Emission from Donor Transitions in Silicon

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S. G. Pavlov, R. Kh. Zhukavin, E. E. Orlova, and V. N. Shastin
Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod GSP-105, 603600, Russia

A. V. Kirsanov
Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod GSP-120, Uljanova Street 46, 603600, Russia

H.-W. Hübers and K. Auen
Institute of Space Sensor Technology and Planetary Exploration, DLR, Rutherfordstraße 2, 12489 Berlin, Germany

H. Riemann
Institute of Crystal Growth, Max-Born-Straße 2, 12489 Berlin, Germany

Received 29 November 1999; published in the issue dated 29 May 2000

The observation of far-infrared stimulated emission from shallow donor transitions in silicon is reported. Lasing with a wavelength of 59 μm due to the neutral donor intracenter 2p0→1s(E) transition in Si:P pumped by CO2 laser radiation is obtained. Populations of D0 and D- center states and the balance of the radiation absorption and amplification are theoretically analyzed.

© 2000 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.84.5220
DOI:
10.1103/PhysRevLett.84.5220
PACS:
78.45.+h, 42.55.Rz, 71.55.-i
 
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