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Phys. Rev. Lett. 85, 2557–2560 (2000)

Theory of the Fano Resonance in the STM Tunneling Density of States due to a Single Kondo Impurity

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O. Újsághy1,2, J. Kroha4, L. Szunyogh1, and A. Zawadowski1,2,3
1Department of Physics, Technical University of Budapest, H-1521 Budapest, Hungary
2Research Group of the Hungarian Academy of Sciences, Technical University of Budapest, H-1521 Budapest, Hungary
3Solid State and Optical Research Institute of the Hungarian Academy of Sciences, P.O.B. 49, H-1525 Budapest, Hungary
4Institut für Theorie der Kondensierten Materie, University of Karlsruhe, P.O.B. 6980, D-76128 Karlsruhe, Germany

Received 8 May 2000; published in the issue dated 18 September 2000

The conduction electron density of states nearby single magnetic impurities, as measured recently by scanning tunneling microscopy (STM), is calculated, taking into account tunneling into conduction electron states only. The Kondo effect induces a narrow Fano resonance in the conduction electron density of states. The line shape varies with the distance between STM tip and impurity, in qualitative agreement with experiments, but is very sensitive to details of the band structure. For a Co impurity the experimentally observed width and shift of the Kondo resonance are in accordance with those obtained from a combination of band structure and strongly correlated calculations.

© 2000 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.85.2557
DOI:
10.1103/PhysRevLett.85.2557
PACS:
72.15.Qm, 61.16.Ch, 72.10.Fk