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APS » Journals » Phys. Rev. Lett. » Volume 85 » Issue 13
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Phys. Rev. Lett. 85, 2797–2800 (2000)

Electrical Conductivity of Xenon at Megabar Pressures

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Mikhail I. Eremets, Eugene A. Gregoryanz, Victor V. Struzhkin, Ho-kwang Mao, and Russell J. Hemley
Geophysical Laboratory and Center for High Pressure Research, Carnegie Institution of Washington, 5251 Broad Branch Road N.W., Washington, D.C. 20015

Norbert Mulders
Department of Physics and Astronomy, University of Delaware, Newark, Delaware 19716

Neil M. Zimmerman
National Institute of Standards and Technology, Gaithersburg, Maryland 20899

Received 11 January 2000; published in the issue dated 25 September 2000

The electrical transport properties of solid xenon were directly measured at pressures up to 155 GPa and temperatures from 300 K to 27 mK. The temperature dependence of resistance changed from semiconducting to metallic at pressures between 121 and 138 GPa, revealing direct proof of metallization of a rare-gas solid by electrical transport measurements. Anomalies in the conductivity are observed at low temperatures in the vicinity of the transition such that purely metallic behavior is observed only at 155 GPa over the entire temperature range.

© 2000 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.85.2797
DOI:
10.1103/PhysRevLett.85.2797
PACS:
72.15.-v
 
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