Phys. Rev. Lett. 85, 3660–3663 (2000)Diffusional Kinetics of SiGe Dimers on Si(100) Using Atom-Tracking Scanning Tunneling MicroscopyReceived 31 May 2000; published in the issue dated 23 October 2000 Quantitative measurements of the diffusion of adsorbed mixed Ge-Si dimers on the Si(100) surface have been made as a function of temperature using atom-tracking scanning tunneling microscopy. These mixed dimers are distinguishable from pure Si-Si dimers by their characteristic kinetics—a 180° rotation between two highly buckled configurations. At temperatures at which the mixed dimers diffuse, atomic-exchange events occur, in which the Ge atom in the adsorbed dimer exchanges with a substrate Si atom. Reexchange can also occur when the diffusing Si-Si dimer revisits the original site of exchange. © 2000 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.85.3660
DOI:
10.1103/PhysRevLett.85.3660
PACS:
68.10.Jy, 61.16.Ch, 68.35.Bs, 68.35.Fx
|
|
About | Terms and Conditions | Subscriptions | Search | Help
Use of the American Physical Society websites and journals implies that the user has read and agrees to our Terms and Conditions and any applicable Subscription Agreement. Physical Review®, Physical Review Letters®, Reviews of Modern Physics®, and Physical Review Special Topics® are trademarks of the American Physical Society.