Phys. Rev. Lett. 85, 848–851 (2000)Density of States of Amorphous GdxSi1-x at the Metal-Insulator TransitionReceived 14 February 2000; published in the issue dated 24 July 2000 We have determined the electronic density of states of amorphous GdxSi1-x, NGdSi(E), in the vicinity of the metal-insulator transition by measuring the tunneling conductance dI/dV across a GdxSi1-x/oxide/Pb tunnel junction at low T (T≈100 mK). By applying a magnetic field we can tune through the metal-insulator transition and simultaneously measure the transport and N(E) on a single sample. We find a smooth transition from a metal with strong Coulomb interactions to a developing Coulomb gap in the insulating regime. In the metallic region NGdSi(0) scales approximately with σ2. © 2000 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.85.848
DOI:
10.1103/PhysRevLett.85.848
PACS:
75.50.Pp, 71.23.Cq, 71.30.+h, 75.70.Pa
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