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Phys. Rev. Lett. 86, 2150–2153 (2001)

Gateable Suppression of Spin Relaxation in Semiconductors

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J. S. Sandhu1, A. P. Heberle2,*, J. J. Baumberg3,†, and J. R. A. Cleaver1
1Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom
2Hitachi Cambridge Laboratory, Cavendish Laboratory, Madingley Road, Cambridge CB3 0HE, United Kingdom
3Department of Physics & Astronomy, University of Southampton, Southampton, SO17 1BJ, United Kingdom

Received 19 September 2000; published in the issue dated 5 March 2001

The decay of spin memory in a 2D electron gas is found to be suppressed close to the metal-insulator transition. By dynamically probing the device using ultrafast spectroscopy, relaxation of optically excited electron spin is directly measured as a function of the carrier density. Motional narrowing favors spin preservation in the maximally scattered but nonlocalized electronic states. This implies that the spin-relaxation rate can be both tuned in situ and specifically engineered in appropriate device geometries.

© 2001 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.86.2150
DOI:
10.1103/PhysRevLett.86.2150
PACS:
78.47.+p, 42.40.My, 71.30.+h, 73.21.-b

*Email address: heberle@phy.cam.ac.uk

†Email address: j.j.baumberg@soton.ac.uk

 
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