Phys. Rev. Lett. 86, 2645–2648 (2001)Resonant Tunneling into a Biased Fractional Quantum Hall EdgeReceived 11 October 2000; published in the issue dated 19 March 2001 We observe resonant tunneling into a voltage biased fractional quantum Hall effect (FQHE) edge, using atomically sharp tunnel barriers unique to cleaved-edge overgrown devices. The resonances demonstrate different tunnel couplings to the metallic lead and the FQHE edge. Weak coupling to the FQHE edge produces clear non-Fermi liquid behavior with a sixfold increase in resonance area under bias arising from the power law density of states at the FQHE edge. A simple device model uses the resonant tunneling formalism for chiral Luttinger liquids to successfully describe the data. © 2001 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.86.2645
DOI:
10.1103/PhysRevLett.86.2645
PACS:
73.43.Jn, 71.10.Pm, 72.20.My
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