Phys. Rev. Lett. 86, 3176–3179 (2001)State-Specific Enhancement of Cl+ and Cl- Desorption for SiCl4 Adsorbed on a Si(100) Surface Following Cl 2 p and Si 2 p Core-Level ExcitationsReceived 14 August 2000; published in the issue dated 2 April 2001 State-specific desorption for SiCl4 adsorbed on a Si(100) surface at ∼90K with variable coverage following the Cl 2p and Si 2p core-level excitations has been investigated using synchrotron radiation. The Cl+ yields show a significant enhancement following the Cl 2p→8a1* excitation. The Cl- yields are notably enhanced at the 8a1* resonance at both Cl 2p and Si 2p edges. The enhancement of the Cl- yield occurs through the formation of highly excited states of the adsorbed molecules. These results provide some new dissociation processes from adsorbates on surfaces via core-level excitation. © 2001 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.86.3176
DOI:
10.1103/PhysRevLett.86.3176
PACS:
79.20.La, 78.70.Dm
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