Phys. Rev. Lett. 86, 3292–3295 (2001)

Extreme Midinfrared Nonlinear Optics in Semiconductors

Abstract

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Alan H. Chin^1,*, Oscar G. Calderón^1,†, and Junichiro Kono²
¹W. W. Hansen Experimental Physics Laboratory, Stanford University, Stanford, California 94305
²Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005

Received 29 August 2000; published in the issue dated 9 April 2001

We have observed extreme nonlinear optical phenomena produced by intense midinfrared (MIR) pulses in semiconductors. These phenomena include multiple off-resonance optical sidebands (up to ±3 MIR photons interacting with a near-infrared photon), multiple MIR harmonics (up to the seventh harmonic), and significant broadening and modification of MIR harmonic spectra. The generation of these extreme MIR nonlinear optical phenomena is primarily aided by cross-phase modulation.

URL:

http://link.aps.org/doi/10.1103/PhysRevLett.86.3292

DOI:

10.1103/PhysRevLett.86.3292

PACS:

42.65.Ky, 42.50.Hz

^*Present address: Lawrence Livermore National Laboratory, P.O. Box 808, Livermore, California 94551.

^†Permanent address: Departamento Optica, Universidad Complutense de Madrid, Ciudad Universitaria s/n, 28040 Madrid, Spain.

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Phys. Rev. Lett. 86, 3292–3295 (2001)

Extreme Midinfrared Nonlinear Optics in Semiconductors