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Phys. Rev. Lett. 86, 3376–3379 (2001)

Radio-Frequency Single-Electron Transistor as Readout Device for Qubits: Charge Sensitivity and Backaction

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A. Aassime1, G. Johansson1, G. Wendin1, R. J. Schoelkopf2, and P. Delsing1
1Microtechnology Center at Chalmers MC2, Department of Microelectronics and Nanoscience, Chalmers University of Technology and Göteborg University, S-412 96, Göteborg, Sweden
2Departments of Applied Physics and Physics, Yale University, New Haven, Connecticut 06520-8284

Received 21 November 2000; published in the issue dated 9 April 2001

We study the radio-frequency single-electron transistor (rf-SET) as a readout device for charge qubits. We measure the charge sensitivity of an rf-SET to be 6.3μe/Hz and evaluate the backaction of the rf-SET on a single Cooper-pair box. This allows us to compare the needed measurement time with the mixing time of the qubit imposed by the measurement. We find that the mixing time can be substantially longer than the measurement time, which would allow readout of the state of the qubit in a single shot measurement.

© 2001 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.86.3376
DOI:
10.1103/PhysRevLett.86.3376
PACS:
73.23.Hk, 03.67.Lx, 85.25.Na