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Phys. Rev. Lett. 86, 4056–4059 (2001)

Nonstoichiometry and the Electrical Activity of Grain Boundaries in SrTiO3

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Miyoung Kim1,2, Gerd Duscher1,3, Nigel D. Browning2, Karl Sohlberg1, Sokrates T. Pantelides1,3, and Stephen J. Pennycook1,3
1Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6030
2Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60612
3Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235

Received 1 June 2000; published in the issue dated 30 April 2001

A combination of experiments and first-principles calculations is used to show that grain boundaries in SrTiO3 are intrinsically nonstoichiometric. Total-energy calculations reveal that the introduction of nonstoichiometry into the grain boundaries is energetically favorable and results in structures that are consistent with atomic-resolution Z-contrast micrographs. Electron energy-loss spectra provide direct evidence of nonstoichiometry. These results and calculations for nonstoichiometric grain boundaries provide an explanation of the microscopic origin of the “double Schottky barriers” that dominate the electrical behavior of polycrystalline oxides.

© 2001 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.86.4056
DOI:
10.1103/PhysRevLett.86.4056
PACS:
61.72.Mm, 68.37.Lp, 71.15.Nc, 82.20.Pm