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Phys. Rev. Lett. 86, 5301–5304 (2001)

Two Disordered Phases of the β-Tin Structure in Binary Semiconductors

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G. J. Ackland
Department of Physics and Astronomy, The University of Edinburgh, Edinburgh EH9 3JZ, Scotland, United Kingdom

Received 6 November 2000; published in the issue dated 4 June 2001

The Ising model on a β-tin structure has a phase diagram containing three distinct phases involving order, disorder, and a frustrated ordering. The x-ray crystallographic observation that no ordered β-tin phases exist at room temperature in compound semiconductors may indicate either “paramagnetic” (dynamic) or frustrated (static) disorder. Density functional pseudopotential calculations determine which regimes real materials fall into and predict that in materials such as GaSb, there may be two temperature-driven transitions between β-tin structures: from ordered, to frustrated order, to disordered.

© 2001 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.86.5301
DOI:
10.1103/PhysRevLett.86.5301
PACS:
62.50.+p, 61.66.Bi, 64.30.+t