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APS » Journals » Phys. Rev. Lett. » Volume 86 » Issue 5
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Phys. Rev. Lett. 86, 866–869 (2001)

Magnetoresistance Anisotropy in Si /SiGe in Tilted Magnetic Fields: Experimental Evidence for a Stripe-Phase Formation

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U. Zeitler1,*, H. W. Schumacher1,†, A. G. M. Jansen2, and R. J. Haug1
1Institut für Festkörperphysik, Universität Hannover, Appelstraße 2, 30167 Hannover, Germany
2Grenoble High Magnetic Field Laboratory, MPIF-CNRS, B.P. 166, 38042 Grenoble Cedex 09, France

Received 5 July 2000; published in the issue dated 29 January 2001

We observe pronounced transport anisotropies in magnetotransport experiments performed in the two-dimensional electron system of a Si/SiGe heterostructure. They occur when an in-plane field is used to tune two Landau levels with opposite spin to energetic coincidence. The observed anisotropies disappear drastically for temperatures above 1 K. We propose that our experimental findings may be caused by the formation of a unidirectional stripe phase oriented perpendicular to the in-plane field.

© 2001 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.86.866
DOI:
10.1103/PhysRevLett.86.866
PACS:
73.21.-b, 71.70.Di, 73.40.Lq, 73.43.-f

*Electronic mail: zeitler@nano.uni-hannover.de

†Present address: Institut d'Electronique Fondamentale, UMR CNRS 8662, Université Paris Sud, 91405 Orsay Cedex, France.

 
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