Phys. Rev. Lett. 87, 016601 (2001) [4 pages]Room-Temperature Spin Injection from Fe into GaAsReceived 12 April 2001; published 15 June 2001 Injection of spin polarized electrons from a metal into a semiconductor is demonstrated for a GaAs/(In,Ga)As light emitting diode covered with Fe. The circular polarization degree of the observed electroluminescence reveals a spin injection efficiency of 2%. The underlying injection mechanism is explained in terms of a tunneling process. © 2001 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.87.016601
DOI:
10.1103/PhysRevLett.87.016601
PACS:
72.25.Hg, 72.25.Dc, 73.61.Ey, 75.50.Bb
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