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Phys. Rev. Lett. 87, 195504 (2001) [4 pages]

Ab Initio Simulations of Photoinduced Interconversions of Oxygen Deficient Centers in Amorphous Silica

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Davide Donadio1,*, Marco Bernasconi1, and Mauro Boero2
1Istituto Nazionale per la Fisica della Materia and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, via Cozzi 53, I-20126 Milano, Italy
2Joint Research Center for Atom Technology (JRCAT), Angstrom Technology Partnership (ATP), Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-0046, Japan

Received 12 June 2001; published 18 October 2001

We have studied by ab initio molecular dynamics the interconversion between oxygen deficient centers (Si—Si bond, dicoordinated silicon =Si:, and E centers) induced by UV irradiation in a-SiO2. By dynamical simulations in the excited state of a periodic model of a-SiO2 we have identified the reaction path and activation barrier for the SiSi→=Si: interconversion. A new competitive transformation of the excited, neutral Si—Si bond into two E centers has been identified. Our results provide strong theoretical support to the viability of these processes, proposed experimentally on the basis of optical data only.

© 2001 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.87.195504
DOI:
10.1103/PhysRevLett.87.195504
PACS:
61.43.Fs, 71.15.Pd, 71.23.-k

*Corresponding author. Email address: davide.donadio@unimib.it