Phys. Rev. Lett. 87, 026802 (2001) [4 pages]

Surface Conductance near the Order-Disorder Phase Transition on Si(100)

Abstract

References

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Kwonjae Yoo^1a,1b and H. H. Weitering²
^1aDepartment of Physics and Astronomy, The University of Tennessee, Knoxville, Tennessee 37996
^1band Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
²Department of Applied Physics and DIMES, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands

Received 9 June 2000; published 21 June 2001

The surface conductance of the Si(100)-(2×1) surface was measured as a function of temperature on a fully depleted Si(100)/SiO₂/Si substrate. The surface-state conductance is surprisingly large and reveals a clear signature of the c(4×2)→2×1 order-disorder phase transition of buckled Si dimers on Si(100). Surface scattering increases with decreasing c(4×2) order on the surface.

URL:

http://link.aps.org/doi/10.1103/PhysRevLett.87.026802

DOI:

10.1103/PhysRevLett.87.026802

PACS:

73.25.+i, 68.35.Bs, 68.35.Rh

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Phys. Rev. Lett. 87, 026802 (2001) [4 pages]

Surface Conductance near the Order-Disorder Phase Transition on Si(100)