Phys. Rev. Lett. 87, 246801 (2001) [4 pages]Zero-Bias Anomaly in Disordered WiresReceived 16 June 2001; published 19 November 2001 We calculate the low-energy tunneling density of states ν(ε,T) of an N-channel disordered wire, taking into account the electron-electron interaction nonperturbatively. The finite scattering rate 1/τ results in a crossover from the Luttinger liquid behavior at higher energies, ν∝εα, to the exponential dependence ν(ε,T = 0)∝exp(-ε*/ε) at low energies, where ε*∝1/(Nτ). At finite temperature T, the tunneling density of states depends on the energy through the dimensionless variable ε/√ε*T. At the Fermi level ν(ε = 0,T)∝exp(-√ε*/T). © 2001 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.87.246801
DOI:
10.1103/PhysRevLett.87.246801
PACS:
73.63.-b, 73.21.Hb, 73.23.Hk
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