Phys. Rev. Lett. 87, 256805 (2001) [4 pages]Ambipolar Electrical Transport in Semiconducting Single-Wall Carbon NanotubesReceived 5 July 2001; published 3 December 2001 Ambipolar electrical transport is reported in single-wall carbon nanotube (SWNT) field-effect transistors. In particular, the properties of SWNT junctions to TiC are discussed in detail. The carbide-nanotube junctions are abrupt and robust. In contrast to planar junctions, these contacts present low resistance for the injection of both p- and n-type carriers—the apparent barrier height of the junction is modified by the gate field. Thus SWNTs offer the novel possibility of ambipolar Ohmic contacts. © 2001 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.87.256805
DOI:
10.1103/PhysRevLett.87.256805
PACS:
85.35.Kt, 73.30.+y, 73.40.Sx, 73.63.Rt
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