Phys. Rev. Lett. 87, 276801 (2001) [4 pages]Insulator at the Ultrathin Limit: MgO on Ag(001)Received 21 January 2000; revised 27 February 2001; published 7 December 2001 The electronic structure and morphology of ultrathin MgO films epitaxially grown on Ag(001) were investigated using low-temperature scanning tunneling spectroscopy and scanning tunneling microscopy. Layer-resolved differential conductance ( dI/dU) measurements reveal that, even at a film thickness of three monolayers, a band gap of about 6 eV is formed corresponding to that of the MgO(001) single-crystal surface. This finding is confirmed by layer-resolved calculations of the local density of states based on density functional theory. © 2001 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.87.276801
DOI:
10.1103/PhysRevLett.87.276801
PACS:
73.20.At, 68.37.Ef, 77.55.+f, 79.60.Bm
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