Phys. Rev. Lett. 87, 086401 (2001) [4 pages]Scaling of the Magnetoconductivity of Silicon MOSFETs: Evidence for a Quantum Phase Transition in Two DimensionsReceived 30 September 2000; revised 8 May 2001; published 3 August 2001 For a broad range of electron densities n and temperatures T, the in-plane magnetoconductivity of the two-dimensional system of electrons in silicon MOSFETs can be scaled onto a universal curve with a single parameter Hσ(n,T), where Hσ obeys the empirical relation Hσ = A(n)[Δ(n)2+T2]1/2. The characteristic energy kBΔ associated with the magnetic field dependence of the conductivity decreases with decreasing density, and extrapolates to 0 at a critical density n0, signaling the approach to a zero-temperature quantum phase transition. We show that Hσ = AT for densities near n0. © 2001 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.87.086401
DOI:
10.1103/PhysRevLett.87.086401
PACS:
71.30.+h, 73.40.Qv, 73.50.Jt
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