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Phys. Rev. Lett. 88, 126601 (2002) [4 pages]

Spin-Filter Device Based on the Rashba Effect Using a Nonmagnetic Resonant Tunneling Diode

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Takaaki Koga*, Junsaku Nitta, and Hideaki Takayanagi
NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa, 243-0198 Japan

Supriyo Datta
School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907

Received 1 October 2001; published 12 March 2002

We propose an electronic spin-filter device that uses a nonmagnetic triple barrier resonant tunneling diode (TB-RTD). This device combines the spin-split resonant tunneling levels induced by the Rashba spin-orbit interaction and the spin blockade phenomena between two regions separated by the middle barrier in the TB-RTD. Detailed calculations using the InAlAs/InGaAs material system reveal that a splitting of a peak should be observed in the I-V curve of this device as a result of the spin-filtering effect. The filtering efficiency exceeds 99.9% at the peak positions in the I-V curve.

© 2002 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.88.126601
DOI:
10.1103/PhysRevLett.88.126601
PACS:
72.25.Hg, 72.25.Mk, 73.40.Ei, 73.40.Gk

*Also with Nanostructure and Material Property, PRESTO, Japan Science and Technology Corporation (JST). Electronic address: koga@will.brl.ntt.co.jp