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Phys. Rev. Lett. 88, 176101 (2002) [4 pages]

Origin of the Stability of Ge(105) on Si: A New Structure Model and Surface Strain Relaxation

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Y. Fujikawa1,2, K. Akiyama1, T. Nagao1, T. Sakurai1, and M. G. Lagally1,2
1Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
2University of Wisconsin–Madison, Madison, Wisconsin 53706

T. Hashimoto3, Y. Morikawa3,4, and K. Terakura3
3Research Institute for Computational Sciences and Research Consortium for Synthetic Nano-Function Materials Project, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
4School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Tatsunokuchi, Ishikawa 923-1292, Japan

Received 11 January 2002; published 15 April 2002

The structure of Ge(105)-(1×2) grown on Si(105) is examined by scanning tunneling microscopy (STM) and first-principles calculations. The morphology evolution with an increasing amount of Ge deposited documents the existence of a tensile surface strain in Si(105) and its relaxation with increasing coverage of Ge. A detailed analysis of high-resolution STM images and first-principles calculations produce a new stable model for the Ge(105)-(1×2) structure formed on the Si(105) surface that includes the existence of surface strain. It corrects the model developed from early observations of the facets of “hut” clusters grown on Si(001).

© 2002 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.88.176101
DOI:
10.1103/PhysRevLett.88.176101
PACS:
68.35.Bs, 68.35.Gy, 68.37.Ef, 81.05.Cy
 
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