Phys. Rev. Lett. 89, 017402 (2002) [4 pages]Large Four-Wave Mixing of Spatially Extended Excitonic States in Thin GaAs LayersReceived 12 February 2002; published 18 June 2002 We study the size dependence of the nonlinear response of weakly confined excitons for the size region beyond the long wavelength approximation regime. The observed degenerate-four-wave mixing signal of GaAs thin layers exhibits an anomalous size dependence, where the signal is resonantly enhanced at a particular thickness region. The theoretical analysis elucidates that this enhancement is due to the size-resonant enhancement of the internal field with a spatial structure relevant to the nondipole-type excitonic state. These results establish the formerly proposed new type of size dependence of nonlinear response due to the nonlocality induced double resonance. © 2002 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.89.017402
DOI:
10.1103/PhysRevLett.89.017402
PACS:
78.66.Fd, 42.65.-k, 71.35.-y, 71.36.+c
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