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Phys. Rev. Lett. 89, 107203 (2002) [4 pages]

Unconventional Carrier-Mediated Ferromagnetism above Room Temperature in Ion-Implanted (Ga, Mn)P:C

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N. Theodoropoulou and A. F. Hebard*
Department of Physics, University of Florida, Gainesville, Florida 32611-8440

M. E. Overberg, C. R. Abernathy, and S. J. Pearton
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-8440

S. N. G. Chu
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974

R. G. Wilson
Consultant, Stevenson Ranch, California 95131

Received 28 January 2002; published 15 August 2002

Ion implantation of Mn ions into hole-doped GaP has been used to induce ferromagnetic behavior above room temperature for optimized Mn concentrations near 3 at. %. The magnetism is suppressed when the Mn dose is increased or decreased away from the 3 at. % value, or when n-type GaP substrates are used. At low temperatures the saturated moment is on the order of 1 Bohr magneton, and the spin wave stiffness inferred from the Bloch-law T3/2 dependence of the magnetization provides an estimate Tc=385   K of the Curie temperature that exceeds the experimental value, Tc=270   K. The presence of ferromagnetic clusters and hysteresis to temperatures of at least 330 K is attributed to disorder and proximity to a metal-insulating transition.

© 2002 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.89.107203
DOI:
10.1103/PhysRevLett.89.107203
PACS:
75.50.Pp, 72.25.Dc

*Electronic address: afh@phys.ufl.edu

 
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