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APS » Journals » Phys. Rev. Lett. » Volume 89 » Issue 17
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Phys. Rev. Lett. 89, 177403 (2002) [4 pages]

Quantum Optical Studies on Individual Acceptor Bound Excitons in a Semiconductor

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S. Strauf and P. Michler
Institute of Solid State Physics, Semiconductor Optics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany

M. Klude and D. Hommel
Institute of Solid State Physics, Semiconductor Epitaxy, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany

G. Bacher and A. Forchel
Technische Physik, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany

Received 25 February 2002; published 8 October 2002

We demonstrate the generation of triggered single photons at a predetermined and well defined energy using the radiative recombination of single nitrogen-bound excitons in a semiconductor. The nitrogen atoms are embedded in a ZnSe quantum well structure and were excited by nonresonant optical pumping (82 MHz) at low temperature (4 K). We find resolution-limited photoluminescence lines (280   μeV) which display photon antibunching under continuous optical pumping. Our results also suggest that single nitrogen-bound excitons are well suited for cavity quantum electrodynamics experiments.

© 2002 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.89.177403
DOI:
10.1103/PhysRevLett.89.177403
PACS:
78.67.–n, 03.67.–a, 42.50.Dv, 78.55.Et
 
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