corner
corner

Phys. Rev. Lett. 89, 226804 (2002) [4 pages]

Capacitive-Coupling-Enhanced Switching Gain in an Electron Y-Branch Switch

Download: PDF (330 kB) Buy this article Export: BibTeX or EndNote (RIS)

S. Reitzenstein, L. Worschech, P. Hartmann, M. Kamp, and A. Forchel
Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany

Received 15 July 2002; published 7 November 2002

See accompanying Physics Focus

We have fabricated electron Y-branch switches (YBS) on modulation doped GaAs/AlGaAs heterostructures. The Y branch consists of a one-dimensional source, which is split along the branching section into two one-dimensional drains. In addition to source drain voltages, external electric fields can be applied via gates along the branches.In the nonlinear transport regime sweeps of the side-gate voltages lead to a voltage difference between the drain reservoirs with gain. This switching gain increases superlinearly with the bias voltage applied between the source and the drains of the YBS. We explain the bias voltage enhanced switching by a capacitive coupling of the branches.

© 2002 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.89.226804
DOI:
10.1103/PhysRevLett.89.226804
PACS:
73.50.–h, 73.63.–b