Phys. Rev. Lett. 89, 226804 (2002) [4 pages]Capacitive-Coupling-Enhanced Switching Gain in an Electron Y-Branch Switch
See accompanying Physics Focus We have fabricated electron Y-branch switches (YBS) on modulation doped GaAs/AlGaAs heterostructures. The Y branch consists of a one-dimensional source, which is split along the branching section into two one-dimensional drains. In addition to source drain voltages, external electric fields can be applied via gates along the branches.In the nonlinear transport regime sweeps of the side-gate voltages lead to a voltage difference between the drain reservoirs with gain. This switching gain increases superlinearly with the bias voltage applied between the source and the drains of the YBS. We explain the bias voltage enhanced switching by a capacitive coupling of the branches. © 2002 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.89.226804
DOI:
10.1103/PhysRevLett.89.226804
PACS:
73.50.–h, 73.63.–b
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