Phys. Rev. Lett. 89, 227201 (2002) [4 pages]Self-Compensation in Manganese-Doped Ferromagnetic SemiconductorsReceived 12 June 2002; published 6 November 2002 We present a theory of interstitial Mn in Mn-doped ferromagnetic semiconductors. Using density-functional theory, we show that under the nonequilibrium conditions of growth, interstitial Mn is easily formed near the surface by a simple low-energy adsorption pathway. In GaAs, isolated interstitial Mn is an electron donor, each compensating two substitutional Mn acceptors. Within an impurity-band model, partial compensation promotes ferromagnetic order below the metal-insulator transition, with the highest Curie temperature occurring for 0.5 holes per substitutional Mn. © 2002 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.89.227201
DOI:
10.1103/PhysRevLett.89.227201
PACS:
75.50.Pp, 68.43.–h, 71.55.Eq, 75.10.–b
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