Phys. Rev. Lett. 89, 257405 (2002) [4 pages]Resonant Two-Magnon Raman Scattering and Photoexcited States in Two-Dimensional Mott InsulatorsReceived 18 May 2002; published 5 December 2002 We investigate the resonant two-magnon Raman scattering in two-dimensional (2D) Mott insulators by using a half-filled 2D Hubbard model in the strong coupling limit. By performing numerical diagonalization calculations for small clusters, we find that the Raman intensity is enhanced when the incoming photon energy is not near the optical absorption edge but well above it, being consistent with experimental data. The absence of resonance near the gap edge is associated with the presence of background spins, while photoexcited states for resonance are found to be characterized by the charge degree of freedom. The resonance mechanism is different from those proposed previously. © 2002 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.89.257405
DOI:
10.1103/PhysRevLett.89.257405
PACS:
78.30.Hv, 71.10.Fd, 78.20.Bh
|
|
About | Terms and Conditions | Subscriptions | Search | Help
Use of the American Physical Society websites and journals implies that the user has read and agrees to our Terms and Conditions and any applicable Subscription Agreement. Physical Review®, Physical Review Letters®, Reviews of Modern Physics®, and Physical Review Special Topics® are trademarks of the American Physical Society.