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APS » Journals » Phys. Rev. Lett. » Volume 89 » Issue 7
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Phys. Rev. Lett. 89, 076406 (2002) [4 pages]

Hole-Hole Interaction Effect in the Conductance of the Two-Dimensional Hole Gas in the Ballistic Regime

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Y. Y. Proskuryakov1, A. K. Savchenko1, S. S. Safonov1, M. Pepper2, M. Y. Simmons2,*, and D. A. Ritchie2
1School of Physics, University of Exeter, Stocker Road, Exeter EX4 4QL, United Kingdom
2Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE, United Kingdom

Received 14 September 2001; published 30 July 2002

On a high-mobility two-dimensional hole gas (2DHG) in a GaAs/GaAlAs heterostructure we study the interaction correction to the Drude conductivity in the ballistic regime, kBTτ/ℏ>1. It is shown that the “metallic” behavior of the resistivity (dρ/dT>0) of the low-density 2DHG is caused by the hole-hole interaction effect in this regime. We find that the temperature dependence of the conductivity and the parallel-field magnetoresistance are in agreement with this description, and determine the Fermi-liquid interaction constant F0σ which controls the sign of dρ/dT.

© 2002 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.89.076406
DOI:
10.1103/PhysRevLett.89.076406
PACS:
71.30.+h, 73.21.–b, 73.40.Qv

*Current address: School of Physics, University of New South Wales, Sydney 2052, Australia.

 
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