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Phys. Rev. Lett. 90, 107201 (2003) [4 pages]

Giant Planar Hall Effect in Epitaxial (Ga,Mn)As Devices

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H. X. Tang1, R. K. Kawakami2, D. D. Awschalom2, and M. L. Roukes1
1Condensed Matter Physics 114-36, California Institute of Technology, Pasadena, California 91125
2Department of Physics, University of California, Santa Barbara, California 93106

Received 5 April 2002; published 12 March 2003

Large Hall resistance jumps are observed in microdevices patterned from epitaxial (Ga,Mn)As layers when subjected to a swept, in-plane magnetic field. This giant planar Hall effect is 4 orders of magnitude greater than previously observed in metallic ferromagnets. This enables extremely sensitive measurements of the angle-dependent magnetic properties of (Ga,Mn)As. The magnetic anisotropy fields deduced from these measurements are compared with theoretical predictions.

© 2003 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.90.107201
DOI:
10.1103/PhysRevLett.90.107201
PACS:
75.60.–d, 72.80.Ey, 75.50.Pp, 75.70.–i
 
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