Phys. Rev. Lett. 90, 136603 (2003) [4 pages]Quantum Interference Control of Ballistic Pure Spin Currents in Semiconductors
See accompanying Physics Focus We demonstrate all-optical quantum interference injection and control of a ballistic pure spin current (without an accompanying charge current) in GaAs/AlGaAs quantum wells, consisting of spin-up electrons traveling in one direction and spin-down electrons traveling in the opposite direction. This current is generated through quantum interference of one- and two-photon absorption of ∼100 fs phase-locked pulses that have orthogonal linear polarizations. We use a spatially resolved pump-probe technique to measure carrier movement of ∼10 nm. Results agree with recent theoretical predictions. © 2003 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.90.136603
DOI:
10.1103/PhysRevLett.90.136603
PACS:
72.25.Dc, 42.65.–k, 72.25.Fe
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