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APS » Journals » Phys. Rev. Lett. » Volume 90 » Issue 14
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Phys. Rev. Lett. 90, 146101 (2003) [4 pages]

Equilibrium Model of Bimodal Distributions of Epitaxial Island Growth

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Robert E. Rudd*
Lawrence Livermore National Laboratory, Condensed Matter Physics Division, L-045, Livermore, California 94551

G. A. D. Briggs and A. P. Sutton
Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom

G. Medeiros-Ribeiro
Laboratório Nacional de Luz Síncrotron, P.O. Box 6192, Campinas, SP 13084-971, Brazil

R. Stanley Williams
Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304

Received 29 May 2002; published 8 April 2003

We present a nanostructure diagram for use in designing heteroepitaxial systems of quantum dots. The nanostructure diagram is computed using a new equilibrium statistical physics model and predicts the island size and shape distributions for a range of combinations of growth temperature and amount of deposited material. The model is applied to Ge on Si(001), the archetype for bimodal island growth, and the results compare well with data from atomic force microscopy of Ge/Si islands grown by chemical vapor deposition.

© 2003 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.90.146101
DOI:
10.1103/PhysRevLett.90.146101
PACS:
68.35.Md, 68.35.Bs, 68.55.Jk, 68.65.–k

*Electronic address: robert.rudd@llnl.gov

 
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