Phys. Rev. Lett. 90, 225502 (2003) [4 pages]Z1/Z2 Defects in 4H-SiCReceived 13 December 2002; published 5 June 2003 First-principles calculations are carried out on models for the Z1/Z2 defects in 4H-SiC which are found in as-grown and irradiated n-type material. We show that an interstitial-nitrogen–interstitial-carbon defect is exceptionally thermally stable, bistable, and has negative-U character with donor and acceptor levels close to those attributed to the defect. © 2003 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.90.225502
DOI:
10.1103/PhysRevLett.90.225502
PACS:
61.72.Bb, 61.72.Ji, 71.15.Nc
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