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Phys. Rev. Lett. 90, 057404 (2003) [4 pages]

Ultrafast Carrier Dynamics in Single-Wall Carbon Nanotubes

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J-S. Lauret1,3, C. Voisin1, G. Cassabois1, C. Delalande1, Ph. Roussignol1, O. Jost2, and L. Capes3
1Laboratoire de Physique de la Matière Condensée de l’École Normale Supérieure 24, rue Lhomond, 75231 Paris Cedex 05, France
2Institut für Werkstoffwissenschaft der TU Dresden, D-01062 Dresden, Germany
3Laboratoire d’Électronique Moléculaire-CEA/MOTOROLA Paris, MOTOROLA Labs, Espace Technologique Saint-Aubin, 91193 Gif-sur-Yvette Cedex, France

Received 19 July 2002; published 5 February 2003

Time-resolved carrier dynamics in single-wall carbon nanotubes is investigated by means of two-color pump-probe experiments. The recombination dynamics is monitored by probing the transient photobleaching observed on the interband transitions of the semiconducting tubes. This dynamics takes place on a 1 ps time scale which is 1 order of magnitude slower than in graphite. Transient photoinduced absorption is observed for nonresonant probing and is interpreted as a global redshift of the π-plasmon resonance. We show that the opening of the band gap in semiconducting carbon nanotubes determines the nonlinear response dynamics over the whole visible and near-infrared spectrum.

© 2003 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.90.057404
DOI:
10.1103/PhysRevLett.90.057404
PACS:
78.67.Ch, 42.65.–k, 78.47.+p