Phys. Rev. Lett. 91, 017002 (2003) [4 pages]Pseudogap in Doped Mott Insulators is the Near-Neighbor Analogue of the Mott GapSee Also: Publisher's Note
We show that the strong-coupling physics inherent to the insulating Mott state in 2D leads to a jump in the chemical potential upon doping and the emergence of a pseudogap in the single-particle spectrum below a characteristic temperature. The pseudogap arises because any singly occupied site not immediately neighboring a hole experiences a maximum energy barrier for transport equal to t2/U, t the nearest-neighbor hopping integral and U the on-site repulsion. The resultant pseudogap cannot vanish before each lattice site, on average, has at least one hole as a near neighbor. The ubiquity of this effect in all doped Mott insulators suggests that the pseudogap in the cuprates has a simple origin. © 2003 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.91.017002
DOI:
10.1103/PhysRevLett.91.017002
PACS:
74.25.Dw, 74.20.–z, 74.72.–h
See AlsoPublisher's Note: Tudor D. Stanescu and Philip Phillips, Publisher’s Note: Pseudogap in Doped Mott Insulators Is the Near-Neighbor Analogue of the Mott Gap [Phys. Rev. Lett. 91, 017002 (2003)], Phys. Rev. Lett. 91, 049901 (2003). |
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