Phys. Rev. Lett. 91, 136104 (2003) [4 pages]Atomically Precise Placement of Single Dopants in SiReceived 21 April 2003; published 25 September 2003 We demonstrate the controlled incorporation of P dopant atoms in Si(001), presenting a new path toward the creation of atomic-scale electronic devices. We present a detailed study of the interaction of PH3 with Si(001) and show that it is possible to thermally incorporate P atoms into Si(001) below the H-desorption temperature. Control over the precise spatial location at which P atoms are incorporated was achieved using STM H lithography. We demonstrate the positioning of single P atoms in Si with ∼1 nm accuracy and the creation of nanometer wide lines of incorporated P atoms. © 2003 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.91.136104
DOI:
10.1103/PhysRevLett.91.136104
PACS:
68.65.–k, 03.67.Lx, 68.37.Ef, 85.35.–p
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