Phys. Rev. Lett. 91, 216601 (2003) [4 pages]Unification of the Hole Transport in Polymeric Field-Effect Transistors and Light-Emitting DiodesReceived 26 February 2003; published 19 November 2003 A systematic study of the hole mobility in hole-only diodes and field-effect transistors based on poly(2-methoxy-5-(3′,7′-dimethyloctyloxy)-p-phenylene vinylene) and on amorphous poly(3-hexyl thiophene) has been performed as a function of temperature and applied bias. The experimental hole mobilities extracted from both types of devices, although based on a single polymeric semiconductor, can differ by 3 orders of magnitude. We demonstrate that this apparent discrepancy originates from the strong dependence of the hole mobility on the charge carrier density in disordered semiconducting polymers. © 2003 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.91.216601
DOI:
10.1103/PhysRevLett.91.216601
PACS:
72.80.Le, 73.61.Ph
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