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Phys. Rev. Lett. 91, 257209 (2003) [4 pages]

Current-Induced Two-Level Fluctuations in Pseudo-Spin-Valve (Co/Cu/Co) Nanostructures

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A. Fábián, C. Terrier, S. Serrano Guisan, X. Hoffer, M. Dubey, L. Gravier, and J.-Ph. Ansermet
Institut de Physique des Nanostructures, École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland

J.-E. Wegrowe
École Polytechnique, Laboratoire des Solides Irradiés, F-91128 Palaiseau CEDEX, France

Received 7 April 2003; published 18 December 2003

Two-level fluctuations of the magnetization state of pseudo-spin-valve pillars Co(10   nm)/ Cu(10   nm)/Co(30   nm) embedded in electrodeposited nanowires (∼40  nm in diameter, 6000 nm in length) are triggered by spin-polarized currents of 107   A/cm2 at room temperature. The statistical properties of the residence times in the parallel and antiparallel magnetization states reveal two effects with qualitatively different dependences on current intensity. The current appears to have the effect of a field determined as the bias field required to equalize these times. The bias field changes sign when the current polarity is reversed. At this field, the effect of a current density of 107   A/cm2 is to lower the mean time for switching down to the microsecond range. This effect is independent of the sign of the current and is interpreted in terms of an effective temperature for the magnetization.

© 2003 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.91.257209
DOI:
10.1103/PhysRevLett.91.257209
PACS:
75.60.Jk, 75.75.+a