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Phys. Rev. Lett. 91, 087205 (2003) [4 pages]

Probing Hole-Induced Ferromagnetic Exchange in Magnetic Semiconductors by Inelastic Neutron Scattering

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H. Kępa1,2,*, Le Van Khoi3, C. M. Brown4,5, M. Sawicki3, J. K. Furdyna6, T. M. Giebultowicz2, and T. Dietl3,†
1Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
2Physics Department, Oregon State University, Corvallis, Oregon 97331, USA
3Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland
4NIST Center for Neutron Research, 100 Bureau Drive, Gaithersburg, Maryland 20899-8562, USA
5Department of Materials and Nuclear Engineering, University of Maryland, College Park, Maryland 20742-7531, USA
6Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USA

Received 26 May 2003; published 22 August 2003

The effect of hole doping on the exchange coupling of the nearest neighbor (NN) Mn pairs in Zn1-xMnxTe is probed by inelastic neutron scattering. The difference in the NN exchange energy ΔJ1 in the presence and in the absence of the holes is determined. The obtained value of ΔJ1 is in good agreement with the predictions of the Zener/RKKY model, even on the insulator side of the metal-insulator transition.

© 2003 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.91.087205
DOI:
10.1103/PhysRevLett.91.087205
PACS:
75.50.Pp, 78.70.Nx

*Electronic address: Henryk.Kepa@fuw.edu.pl

Present address: Institute of Experimental and Applied Physics, Regensburg University, Regensburg, Germany.