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Phys. Rev. Lett. 91, 097202 (2003) [4 pages]

Effective Hamiltonian for Ga1-xMnxAs in the Dilute Limit

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Gregory A. Fiete1,2,3, Gergely Zaránd1,2,3, and Kedar Damle1,4
1Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
2Materials Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois, 60429, USA
3Research Institute of Physics, Budapest University of Technology and Economics, Budapest H-1521, Hungary
4Department of Physics and Astronomy, Rice University, Houston, Texas 77005, USA

Received 6 December 2002; published 29 August 2003

We derive an effective Hamiltonian for Ga1-xMnxAs in the dilute limit, where Ga1-xMnxAs can be described in terms of spin F=3/2 polarons hopping between the Mn sites and coupled to the local Mn spins. We determine the parameters of our model from microscopic calculations. Our approach treats the large Coulomb interaction in a nonperturbative way, captures the effects of spin-orbit coupling and disorder, and is appropriate for other p-doped magnetic semiconductors.

© 2003 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.91.097202
DOI:
10.1103/PhysRevLett.91.097202
PACS:
75.50.Dd, 75.30.Ds, 75.40.Gb