Tersoff et al. Reply: Comparison of Continuum and Step Models for SiGe Islands:

J. Tersoff¹, B. J. Spencer², A. Rastelli^3,*, and H. Von Känel^4,5
1IBM Research Division, T. J. Watson Research CenterYorktown Heights, New York 10598, USA
²Department of MathematicsState University of New York at BuffaloBuffalo, New York 14260-2900, USA
³INFM and Dipartimento di Fisica “A. Volta,”Università degli Studi di PaviaVia Bassi 6, I-27100 Pavia, Italy
⁴ETH Zürich, Laboratorium für FestkörperphysikCH-8093 Zürich, Switzerland
⁵INFM and Dipartimento di Fisica, Politecnico di MilanoPolo di Como, L-NESS, Via Anzani 52, I-22100 Como, Italy

^*Present address: Max-Planck-Institut für Festkörperforschung, Heisenberstrasse 1, D-70569 Stuttgart, Germany.

Original Article: J. Tersoff, B. J. Spencer, A. Rastelli, and H. von Känel, Barrierless Formation and Faceting of SiGe Islands on Si(001), Phys. Rev. Lett. 89, 196104 (2002).