Phys. Rev. Lett. 92, 175504 (2004) [4 pages]Driving Force of Stacking-Fault Formation in SiC p-i-n DiodesReceived 24 November 2003; published 30 April 2004 The driving force of stacking-fault expansion in SiC p-i-n diodes was investigated using optical emission microscopy and transmission electron microscopy. The stacking-fault expansion and properties of the partial dislocations were inconsistent with any stress as the driving force. A thermodynamic free energy difference between the perfect and a faulted structure is suggested as a plausible driving force in the tested diodes, indicating that hexagonal polytypes of silicon carbide are metastable at room temperature. © 2004 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.92.175504
DOI:
10.1103/PhysRevLett.92.175504
PACS:
61.72.Ff, 81.05.Hd, 85.30.Kk
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