Phys. Rev. Lett. 92, 216101 (2004) [4 pages]Semiconducting Surface Reconstructions of p-Type Si(100) Substrates at 5 KReceived 6 October 2003; published 27 May 2004 We report scanning tunneling microscopy (STM) studies of the technologically important Si(100) surface that reveal at 5 K the coexistence of stable surface domains consisting of the p(2×1) reconstruction along with the c(4×2) and p(2×2) reconstructions. Using highly resolved tunneling spectroscopic measurements and tight binding calculations, we prove that the p(2×1) reconstruction is asymmetric and determine the mechanism that enables the contrast variation observed in the formation of the bias-dependent STM images for this reconstruction. © 2004 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.92.216101
DOI:
10.1103/PhysRevLett.92.216101
PACS:
68.35.Bs, 68.37.Ef
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